PART |
Description |
Maker |
V54C3128804VS V54C3128404VS V54C3128804VT |
128Mbit SDRAM 3.3 VOLT/ TSOP II / SOC PACKAGE 8M X 16/ 16M X 8/ 32M X 4 128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4 128Mbit SDRAM.3伏,第二的TSOP / SOC的包米1616米x 82 × 4
|
Mosel Vitelic Corp Mosel Vitelic, Corp.
|
K4S281632M-TL80 K4S281632M K4S281632M-L10 K4S28163 |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4D263238G-GC K4D263238G-GC2A K4D263238G-GC33 K4D2 |
128Mbit GDDR SDRAM
|
Samsung semiconductor
|
K4D28163HD K4D28163HD-TC36 K4D28163HD-TC40 K4D2816 |
128Mbit DDR SDRAM 128Mbit DDR SDRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4D263238G-VC K4D263238G-GC36 K4D263238G-GC K4D263 |
128Mbit GDDR SDRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HY57V64420HG HY57V64420HGLT-H HY57V64420HGLT-K HY5 |
4 Banks x 4M x 4Bit Synchronous DRAM x4 SDRAM
|
http:// Hynix Semiconductor
|
K4S640432D-TC_L80 K4S640432D K4S640432D-TC_L10 K4S |
64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL 64Mbit SDRAM米4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620ALT-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz 4 BANKS X 2M X 16BITS SYNCHRONOUS DRAM
|
HYNIX[Hynix Semiconductor]
|
K4S640432F-TL75 K4S640432F K4S640432F-TC1H K4S6404 |
4M x 4Bit x 4 Banks Synchronous DRAM Data Sheet 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
KM44C1000D KM44V1000D KM44C1000DJL-7 KM44C1000DJL- |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns 1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns 1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns 1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns 1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 70ns
|
Samsung Electronic
|
HYS64V4200GDL-7.5 HYS64V8220GDL HYS64V4200GDL-8-X |
x64 SDRAM Module 3.3 V SDRAM Modules(3.3 V 同步动态RAM模块) 3.3 V SDRAM Module(3.3 V SDRAM 模块) 4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, ZMA144
|
SIEMENS AG INFINEON TECHNOLOGIES AG
|
K4R271669D-TCS8 K4R271669D K4R271669D-T |
128Mbit RDRAM(D-die)
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|